THORLABS APD430A/M Variable-Gain, Temperature-Compensated Si Avalanche Photodetectors (400 - 1000 nm, M4 Taps)

Key Specifications(a)

Detector Type: Silicon APD

Wavelength Range: DC - 100 kHz

Output Bandwidth (3 dB)(b): DC - 400 MHz

Active Area Diameter: 0.5 mm

Typical Max Responsivity: 53 A/W @ M = 100(d)

Transimpedance Gain: 5 kV/A (50 Ω) 10 kV/A (High-Z)

Max Conversion Gain(e): 5.3 × 10^5 V/W

M Factor Adjustment Range: 10 - 100 (Continuous)

M Factor Temperature Stability(f): ±2% (Typical); ±3% (Max)

Saturation Power (CW): 8.0 µW @ M = 100(d) 80 µW @ M = 10

Minimum NEP(g): 0.14 pW/√Hz

Dimensions (H x Wx D): 2.97" x 2.20" x 1.09"

(a) For a complete list of specifications and responsivity graphs, please see the manual. Data are valid at 23 ± 5 °C and 45% ± 15% relative humidity (non-condensing).

(b) At Maximum Gain Setting

(c) At 600 nm

(d) At 800 nm

(e) At the Peak Responsivity Wavelength

(f) Within the 23 ± 5 °C temperature range.

(g) For more information on how NEP is calculated, please see Thorlabs' Noise Equivalent Power White Paper.